
New electrodes (CBICs) developed by researchers can effectively reduce the resistance of the electrodes by forming internal gold nanoparticles. Transmission electron microscopes confirm that gold nanoparticles are actually formed within the electrode. Credit: Korea Institute of Science and Technology
Next-generation imaging technologies are expanding rapidly beyond smartphones to intelligent devices, robotics, augmented reality (XR) devices, healthcare, CCTV and a variety of other industries. At the heart of these advancements in technology are highly efficient and ultra-compact image sensors that convert optical signals into electrical signals. Image sensors capture and process visual information from objects and environments, allowing for accurate reconstruction of shape, size and spatial location.
Currently, commercial image sensors are primarily based on silicon semiconductors. However, research on next-generation image sensors using two-dimensional (2D) semiconductor nanomaterials (silicon potential replacement) is actively underway. These nanomaterials, composed of atomically thin layers several nanometers thick, offer exceptional optical properties and miniaturization possibilities, making them highly suitable for high-performance image sensors.
However, to maximize performance, low-resistance electrodes are required that can efficiently process optical signals. Traditional 2D semiconductor-based sensors face challenges in achieving low resistance electrodes, resulting in reduced optical signal processing efficiency, a major obstacle to commercialization.
He developed innovative electrical materials together with Dr. Min-Chul Park (Kust Graduate School) and Do Kist’s collaborative research teams from Kyung Hwang (Kist, Kist, Ku-Kist Graduate School, Kist School, Ku-Kist Graduate School) and Dr. Min-Chul Park (Kist, Kist, Kist; Korea University and Yonsei University). A 2D semiconductor-based image sensor with high optical signal efficiency.
This paper has been published in the journal Nature Electronics.
By incorporating gold nanoparticles within the electrodes, the team has significantly reduced resistance and significantly improved the performance of the 2D semiconductor image sensor. Furthermore, they effectively addressed the problem of Fermi level pinning, a common challenge with traditional electrode materials, thereby further increasing the optical signal efficiency of the sensors.

We evaluated the performance of 2D semiconductor photodetectors using CBIC electrodes and found that the linear dynamic range characteristics are significantly improved compared to conventional MIS electrodes. Credit: Korea Institute of Science and Technology

Using the developed electrodes, we demonstrated integrated imaging-based 3D imaging and display using lens arrays to verify their performance. Credit: Korea Institute of Science and Technology
In particular, the team successfully applied this technology to implement integration-based 3D imaging and glasses-free display technology inspired by the combined eye structure of Dragonfly. Using essential imaging technology, we achieved acquisition and replication of RGB full-color 3D images, allowing recording and reconstruction of 3D object shapes.
In the future, these high-performance image sensors are expected to be widely used in a variety of advanced industries, including XR devices, artificial intelligence (AI), and autonomously driven systems.
“By overcoming the technical limitations caused by the electrode problems of existing 2D semiconductor devices, this research is expected to significantly accelerate the industrialization of next-generation imaging system technologies, which offer the advantages of light absorption and miniaturization,” says Do Kyung Hwang.
He further emphasized the scalability of the research, saying, “The developed electrode materials are easy to manufacture, expandable over a wide range of areas, and can be widely applied to a variety of semiconductor-based optoelectronic devices.”
Dr Min-Chul Park added, “2D semiconductor-based optoelectronic devices that overcome the challenges of Fermi-level pinning will have a major impact on the entire industry in the future, demanding ultra-compact, ultra-high resolution, and high-performance visual sensors.”
Details: Jisu Jang et al, Conductive Bridge Interlayer Contact for 2D Optoelectronic Devices, Nature Electronics (2025). doi:10.1038/s41928-025-01339-9
Provided by the National Council on Science and Technology
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