Synthesis and characterization of 2D Mn-doped ZnSe quantum nanoribbons. a) Schematic diagram showing the synthesis of Mn-doped ZnSe quantum nanoribbons. b) Low resolution, c, d) side view, and e) high resolution TEM images of Mn-doped ZnSe quantum nanoribbons (xMn = 12%). f) Absorption, PL, and PLE spectra of Mn-doped ZnSe quantum nanoribbons (xMn = 7%). g) experimental k2-weighted Zn and Mn K-edge EXAFS oscillations, h) Fourier transformed EXAFS spectra with fitting based on tetrahedral symmetry, and i) Fourier filtered EXAFS spectra (xMn = 12%). Credit: Small Science (2024). DOI: 10.1002/smsc.202400300
A research team has successfully developed a new technique to control doping in the nucleus (seed) phase to improve the performance of semiconductor nanocrystals. This study reveals how the process and location of doping differ depending on the type of doping element (dopant). The developed technology is expected to be widely used in cutting-edge electronic devices such as displays and transistors.
In recent years, with the rapid development of cutting-edge technologies such as displays and transistors, there has been increasing interest in technologies that can precisely control doping in nanoscale semiconductors. In particular, II-VI semiconductor-based nanocrystals have been widely studied due to their excellent optical and electrical properties.
Doping plays an important role in semiconductor technology, but the problem remains that doping efficiency is low in small semiconductors such as nanocrystals. This problem occurs because dopants tend to be absorbed onto the surface of the semiconductor during growth and do not effectively penetrate inside.
In this context, Professor Jiwoong Yang’s research team at DGIST has developed a controlled nucleation doping method that induces doping at the “nanocluster” stage, a precursor to nanocrystal growth. Using this technique, the team successfully implemented stable and precise doping in ZnSe semiconductor nanocrystals and determined why the doping process and location differ depending on the type of dopant.
This research is published in the academic journal Small Science.
Previous studies on doping II-VI semiconductor nanocrystals have mainly used the heavy metal CdSe, which is environmentally harmful and has low stability. In this research, we developed a technology applicable to nanocrystals that eliminates the use of heavy metals, and demonstrated the feasibility of practical application while also addressing environmental issues. Furthermore, this study demonstrated the applicability of this technology across a variety of electronic devices such as displays and transistors.
Professor Yang said, “Through this research, we were able to systematically establish doping control technology in nanocrystals.This result will provide important basic data for the design and manufacturing of optoelectronic devices such as next-generation displays and transistors.” “It will not only be useful, but it will open up new possibilities.” Possibility to design innovative devices through precise doping control techniques. ”
This research was conducted in collaboration with a research team led by Stephen Linge (Dongwon Kim) from the Department of Chemistry at Korea University.
Further information: Seunghyun Ji et al, Nucleation-controlled doping of II-VI semiconductor nanocrystals mediated by Magic-Sized Clusters, Small Science (2024). DOI: 10.1002/smsc.202400300
Provided by: Daegu Kyungbuk University of Science and Technology
Citation: Innovative doping technique boosts performance of semiconductor nanocrystals (January 6, 2025) from https://phys.org/news/2025-01-doping-technique-boosts-semiconductor-nanocrystal.html 2025 Retrieved January 7, 2018
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