Newswise – Next-generation imaging technology is rapidly expanding beyond smartphones to intelligent devices, robotics, extended reality (XR) devices, healthcare, CCTV and a variety of other industries. At the heart of these advancements in technology are highly efficient and ultra-compact image sensors that convert optical signals into electrical signals. Image sensors capture and process visual information from objects and environments, allowing for accurate reconstruction of shape, size and spatial location.
Currently, commercial image sensors are primarily based on silicon semiconductors. However, research is actively underway on next-generation image sensors that utilize silicon potential replacement using two-dimensional (2D) semiconductor nanomaterials. These nanomaterials, composed of atomically thin layers several nanometers thick, offer exceptional optical properties and miniaturization possibilities, making them highly suitable for high-performance image sensors. However, to maximize performance, low-resistance electrodes are required that can efficiently process optical signals. Traditional 2D semiconductor-based sensors face challenges in achieving low resistance electrodes, resulting in reduced optical signal processing efficiency, a major obstacle to commercialization.
Kyung Hwang (Kist, Ku-Kist Graduate School, Kist School) and Min-Chul Park (Silicon Semiconductor Institute, Kist; University of Korea and Yonsing University) have developed the Science and Technology Cooperative Research Team (Sang-Rok OH) with the Korean Science Materials Cooperative Research Team. Interlayer contact (CBIC). It enables the realization of 2D semiconductor-based image sensors with high optical signal efficiency. By incorporating gold nanoparticles within the electrodes, the team has significantly reduced resistance and significantly improved the performance of the 2D semiconductor image sensor. Furthermore, they effectively addressed the problem of Fermi level pinning, a common challenge with traditional electrode materials, thereby further increasing the optical signal efficiency of the sensors.
In particular, the team applied this technology to successfully implement integral imaging-based 3D (3D) imaging and glasses-free display technology inspired by the combined eye structure of Dragonfly. Using essential imaging technology, we achieved acquisition and replication of RGB full-color 3D images, allowing recording and reconstruction of 3D object shapes. In the future, these high-performance image sensors are expected to be widely used in a variety of advanced industries, including XR devices, artificial intelligence (AI), and autonomously driven systems.
“By overcoming the technical limitations caused by the electrode problems of existing 2D semiconductor devices, this research is expected to significantly accelerate the industrialization of next-generation imaging system technologies, which offer the advantages of light absorption and miniaturization,” says Do Kyung Hwang. He further emphasized the scalability of the research, saying, “The developed electrode materials are easy to manufacture, expandable over a wide range of areas, and can be widely applied to a variety of semiconductor-based optoelectronic devices.” Dr Min-Chul Park added, “2D semiconductor-based optoelectronic devices that overcome the challenges of Fermi-level pinning will have a major impact on the entire industry in the future, demanding ultra-compact, ultra-high resolution, and high-performance visual sensors.”
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Kist was established in 1966 as the first government-funded research institute in Korea. Kist is currently striving to solve national and social challenges and secure growth engines through key and innovative research. For more information, please visit the Kist website https://www.kist.re.kr/eng/index.do
This research was supported by the Ministry of Science (Minister Yoo Sang-Im) and the Ministry of Culture, and through the KIST Major Project, the Korea Individual Research Foundation (RS-2023-NR077025), and the Korean Individual Research Foundation (RS-2023-NR077025) of IITP-2023-RS-cord-cord-00258639. Research and development projects (R2020040080, RS-2020-KC000685). The results of this study were published online in Nature Electronics.
